sot23 silicon high speed switching diode issue 2 ? january 1995 pin configuration partmarking details BAS19 ? a8 bas20 ? a81 bas21 ? a82 absolute maximum ratings. parameter symbol BAS19 bas20 bas21 unit continuous reverse voltage v r 100 150 200 v repetative peak reverse voltage v rrm 120 200 250 v average forward rectified current i f(av) 200 ma forward current i f 200 ma repetative peak forward current i frm 625 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br) BAS19 120 v i r =100 m a (1) bas20 200 v i r =100 m a (1) bas21 250 v i r =100 m a (2) reverse current i r 100 100 na m a v r =v r max v r =v r max, t j =150c static forward voltage v f 1.00 1.25 if=100ma i f =200ma differential resistance r diff 5 w i f =10ma diode capacitance c d 5pff=1mhz reverse recovery time t rr 50 ns i f =30ma to i r =30ma r l =10 w measured at i r =3ma (1) measured under pulsed conditions. pulse width=300 m s. duty cycle 2% (2) at zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275v spice parameter data is available upon request for this device BAS19 bas20 bas21 page no 1 3 2 sot23 BAS19 bas20 bas21 1 3 switching time test data sampling oscilloscope r in =50 w dut r s =50 w pulse generator t rr +i f t i r* t p(tot) t p 90% 10% 90% v recovery time equivalent test circuit input signal output signal input signal total pulse duration t p(tot) 2 m s duty factor d 0.0025 rise time of reverse pulse t r 0.6ns reverse pulse duration t p 100ns oscilloscope rise time t r 0.35ns circuit capacitance* c <1pf
sot23 silicon high speed switching diode issue 2 ? january 1995 pin configuration partmarking details BAS19 ? a8 bas20 ? a81 bas21 ? a82 absolute maximum ratings. parameter symbol BAS19 bas20 bas21 unit continuous reverse voltage v r 100 150 200 v repetative peak reverse voltage v rrm 120 200 250 v average forward rectified current i f(av) 200 ma forward current i f 200 ma repetative peak forward current i frm 625 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br) BAS19 120 v i r =100 m a (1) bas20 200 v i r =100 m a (1) bas21 250 v i r =100 m a (2) reverse current i r 100 100 na m a v r =v r max v r =v r max, t j =150c static forward voltage v f 1.00 1.25 if=100ma i f =200ma differential resistance r diff 5 w i f =10ma diode capacitance c d 5pff=1mhz reverse recovery time t rr 50 ns i f =30ma to i r =30ma r l =10 w measured at i r =3ma (1) measured under pulsed conditions. pulse width=300 m s. duty cycle 2% (2) at zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275v spice parameter data is available upon request for this device BAS19 bas20 bas21 page no 1 3 2 sot23 BAS19 bas20 bas21 1 3 switching time test data sampling oscilloscope r in =50 w dut r s =50 w pulse generator t rr +i f t i r* t p(tot) t p 90% 10% 90% v recovery time equivalent test circuit input signal output signal input signal total pulse duration t p(tot) 2 m s duty factor d 0.0025 rise time of reverse pulse t r 0.6ns reverse pulse duration t p 100ns oscilloscope rise time t r 0.35ns circuit capacitance* c <1pf
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